Widely Tunable High-Power Semiconductor Disk Laser With Nonresonant AR-Assisted Gain Element on Diamond Heat Spreader
Artikel i vetenskaplig tidskrift, 2011

We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered spectral gain characteristics. For heat removal, a flip-chip bonding scheme on diamond was used. To provide high active mirror reflectance over a large wavelength region, the layered structure of the GE formed a nonresonant subcavity assisted by an antireflective structure. A peak output power of more than 7.5 W and a tuning range of 32 nm around the center wavelength of 995 nm were obtained.

Tuning

Tunable lasers

Laser excitation

Heat sinks

Semiconductor lasers

Multilayer interference coatings

Power generation

Författare

Carl Borgentun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chris Hessenius

University of Arizona

Jörgen Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahmoud Fallahi

University of Arizona

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

IEEE Photonics Journal

1943-0655 (ISSN) 1943-0647 (eISSN)

Vol. 3 946-953 6030901

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

DOI

10.1109/JPHOT.2011.2169947