Good selectivity between a NiCr mask and GaAs and AlGaAs by chemically assisted ion beam etching with Cl2 gas
Journal article, 1991

The authors report highly selective etching rates between a Ni-Cr mask and GaAs and AlGaAs layers as well as highly anisotropic profiles in these materials at a nanometer scale using the Ni-Cr mask and chemical assisted ion beam etching. The etching rates of Ni-Cr, GaAs, and AlGaAs depend on Cl2 gas flux. ion beam energy, and ion beam current density. Selectivities of the order of 40:1 and 8:1 between GaAs, respectively. Al0.29Ga0.71As and Ni0.7Cr0.3, were obtained at an ion beam energy of 500 eV, beam current density of 0.2 mA/cm2, and a Cl2 flow of 4.2 ml/min

chromium alloys

chlorine

nickel alloys

gallium arsenide

integrated circuit technology

aluminium compounds

III-V semiconductors

masks

sputter etching

VLSI

Author

Zhaohua Xiao

Department of Solid State Electronics

Bengt Nilsson

Department of Physics

Journal of the Electrochemical Society

0013-4651 (ISSN)

Vol. 138 3086-9

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1002/chin.199149304

More information

Created

10/7/2017