Electric field effects and screening in mesoscopic bismuth wires
Journal article, 1991

Large time-independent conduction fluctuations were observed as a function of transverse electric field in thin (25 nm) and narrow (60 nm) bismuth wires. The conduction of leads far away from a gate capacitor was influenced by changes in the gate voltage. The effects are interpreted as being due to a variation in the Fermi wavelength caused by gate-induced changes in the charge concentration of the leads rather than an electrostatic Aharonov-Bohm-type interference. The screening of charge is strongly reduced in narrow wires

semiconductor quantum wires

electrical conductivity transitions

bismuth

quantum interference phenomena

quantum interference devices

Author

V. T. Petrashov

Department of Physics

V. N. Antonov

Department of Physics

Bengt Nilsson

Department of Physics

Journal of Physics Condensed Matter

0953-8984 (ISSN)

Vol. 3 Copyright 1992, IEE 9705-11

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Condensed Matter Physics

DOI

10.1088/0953-8984/3/48/012

More information

Created

10/7/2017