Electric field effects and screening in mesoscopic bismuth wires
Artikel i vetenskaplig tidskrift, 1991

Large time-independent conduction fluctuations were observed as a function of transverse electric field in thin (25 nm) and narrow (60 nm) bismuth wires. The conduction of leads far away from a gate capacitor was influenced by changes in the gate voltage. The effects are interpreted as being due to a variation in the Fermi wavelength caused by gate-induced changes in the charge concentration of the leads rather than an electrostatic Aharonov-Bohm-type interference. The screening of charge is strongly reduced in narrow wires

semiconductor quantum wires

electrical conductivity transitions

bismuth

quantum interference phenomena

quantum interference devices

Författare

V. T. Petrashov

Institutionen för fysik

V. N. Antonov

Institutionen för fysik

Bengt Nilsson

Institutionen för fysik

Journal of Physics Condensed Matter

0953-8984 (ISSN)

Vol. 3 Copyright 1992, IEE 9705-11

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1088/0953-8984/3/48/012