Selective chemically assisted ion beam etching of Si, polysilicon, and SiO2 using Ni-Cr masks and Cl2
Journal article, 1990

The etching of single-crystal silicon, CVD polysilicon, thermally grown silicon oxides, and Ni-Cr masks have been studied using a chemical-assisted ion beam etching (CAIBE) process. Etch rates were measured as functions of Cl2 gas flow rate, Ar+ ion beam energy, and beam current density. Selectivities of Ni-Cr:Si, Ni-Cr:poly, and Ni-Cr:SiO2 of 1:10, 1:9, and 1:4 were determined. Vertical profiles were obtained down to at least 100 nm linewidths using CAIBE

sputter etching

silicon compounds

semiconductor thin films

silicon

elemental semiconductors

Author

Zhaohua Xiao

Department of Solid State Electronics

Bengt Nilsson

Department of Physics

P. Svedberg

Journal of the Electrochemical Society

0013-4651 (ISSN)

Vol. 137 1579-1581

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Condensed Matter Physics

More information

Created

10/7/2017