Selective chemically assisted ion beam etching of Si, polysilicon, and SiO2 using Ni-Cr masks and Cl2
Artikel i vetenskaplig tidskrift, 1990

The etching of single-crystal silicon, CVD polysilicon, thermally grown silicon oxides, and Ni-Cr masks have been studied using a chemical-assisted ion beam etching (CAIBE) process. Etch rates were measured as functions of Cl2 gas flow rate, Ar+ ion beam energy, and beam current density. Selectivities of Ni-Cr:Si, Ni-Cr:poly, and Ni-Cr:SiO2 of 1:10, 1:9, and 1:4 were determined. Vertical profiles were obtained down to at least 100 nm linewidths using CAIBE

sputter etching

silicon compounds

semiconductor thin films


elemental semiconductors


Zhaohua Xiao

Institutionen för fasta tillståndets elektronik

Bengt Nilsson

Institutionen för fysik

P. Svedberg

Journal of the Electrochemical Society

0013-4651 (ISSN)

Vol. 137 1579-1581


Nanovetenskap och nanoteknik



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