Frequency Multiplier Measurements on Heterostructure Barrier Varactors on a Copper Substrate
Journal article, 2000

We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/ mu m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF/ mu m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.


Lars Dillner

Department of Microelectronics

Wlodek Strupinski

Stein Hollung

Department of Microelectronics

Chris Mann

Jan Stake

Department of Microelectronics

Matthew Beardsley

Erik Kollberg

Department of Microelectronics

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 21 5 206-208

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering



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