Frequency Multiplier Measurements on Heterostructure Barrier Varactors on a Copper Substrate
Journal article, 2000
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/ mu m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF/ mu m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.
Author
Lars Dillner
Department of Microelectronics
Wlodek Strupinski
Stein Hollung
Department of Microelectronics
Chris Mann
Jan Stake
Department of Microelectronics
Matthew Beardsley
Erik Kollberg
Department of Microelectronics
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 21 5 206-208Areas of Advance
Information and Communication Technology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/55.841297