Frequency Multiplier Measurements on Heterostructure Barrier Varactors on a Copper Substrate
Artikel i vetenskaplig tidskrift, 2000
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/ mu m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF/ mu m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.
Författare
Lars Dillner
Institutionen för mikroelektronik
Wlodek Strupinski
Stein Hollung
Institutionen för mikroelektronik
Chris Mann
Jan Stake
Institutionen för mikroelektronik
Matthew Beardsley
Erik Kollberg
Institutionen för mikroelektronik
Publicerad i
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 21 Nummer/häfte 5 s. 206-208Kategorisering
Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
Identifikatorer
DOI
10.1109/55.841297