Frequency Multiplier Measurements on Heterostructure Barrier Varactors on a Copper Substrate
Artikel i vetenskaplig tidskrift, 2000

We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/ mu m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF/ mu m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.


Lars Dillner

Institutionen för mikroelektronik

Wlodek Strupinski

Stein Hollung

Institutionen för mikroelektronik

Chris Mann

Jan Stake

Institutionen för mikroelektronik

Matthew Beardsley

Erik Kollberg

Institutionen för mikroelektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 21 5 206-208


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