Frequency Multiplier Measurements on Heterostructure Barrier Varactors on a Copper Substrate
Artikel i vetenskaplig tidskrift, 2000
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/ mu m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF/ mu m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.
Författare
Lars Dillner
Institutionen för mikroelektronik
Wlodek Strupinski
Stein Hollung
Institutionen för mikroelektronik
Chris Mann
Jan Stake
Institutionen för mikroelektronik
Matthew Beardsley
Erik Kollberg
Institutionen för mikroelektronik
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 21 5 206-208Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
DOI
10.1109/55.841297