Improved Diode Geometry for Planar Heterostructure Barrier Varactors
Paper in proceeding, 1999
We report state-of-the-art performance of tripler efficiency and output power for a new design of AlGaAs-based heterostructure barrier varactor diodes. The new diodes were designed for reduced thermal resistance and series resistance. An efficiency of 4.8% and a maximum output power of 4 mW was achieved at an output frequency of 246 GHz.
HBV
frequency multiplier
Author
Jan Stake
Department of Microelectronics
Chris M. Mann
Lars Dillner
Department of Microelectronics
Stephen H. Jones
Stein Hollung
Department of Microelectronics
Mattias Ingvarson
Department of Microelectronics
Henini Mohamed
Byron Alderman
Erik Kollberg
Department of Microelectronics
Tenth International Symposium on Space Terahertz Technology
485-491
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering