Improved Diode Geometry for Planar Heterostructure Barrier Varactors
Paper i proceeding, 1999

We report state-of-the-art performance of tripler efficiency and output power for a new design of AlGaAs-based heterostructure barrier varactor diodes. The new diodes were designed for reduced thermal resistance and series resistance. An efficiency of 4.8% and a maximum output power of 4 mW was achieved at an output frequency of 246 GHz.

HBV

frequency multiplier

Författare

Jan Stake

Institutionen för mikroelektronik

Chris M. Mann

Lars Dillner

Institutionen för mikroelektronik

Stephen H. Jones

Stein Hollung

Institutionen för mikroelektronik

Mattias Ingvarson

Institutionen för mikroelektronik

Henini Mohamed

Byron Alderman

Erik Kollberg

Institutionen för mikroelektronik

Tenth International Symposium on Space Terahertz Technology

485-491

Ämneskategorier

Annan elektroteknik och elektronik