Organic Thin-Film Transistors with Anodized Gate Dielectric Patterned by Self-Aligned Embossing on Flexible Substrates
Journal article, 2012
An upscalable, self-aligned patterning technique for manufacturing high- performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 mu m are realized with high reproducibility. Resulting on-off ratios of 4 x 106 and mobilities as high as 0.5 cm2 V-1 s-1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.
aluminum
field-effect transistors
displays
transport
self-alignment
insulator
arrays
organic electronics
thin-film transistors
transistors
pentacene
fabrication
anodization
electronics
performance
nanoimprint lithography
Author
Yiheng Qin
Chalmers, Microtechnology and Nanoscience (MC2)
D. H. Turkenburg
Netherlands Organisation for Applied Scientific Research (TNO)
I. Barbu
Netherlands Organisation for Applied Scientific Research (TNO)
W. T. T. Smaal
Netherlands Organisation for Applied Scientific Research (TNO)
K. Myny
Interuniversity Micro-Electronics Center at Leuven
W. Y. Lin
Interuniversity Micro-Electronics Center at Leuven
G. H. Gelinck
Netherlands Organisation for Applied Scientific Research (TNO)
P. Heremans
Interuniversity Micro-Electronics Center at Leuven
Johan Liu
Chalmers, Applied Physics, Electronics Material and Systems
E. R. Meinders
Netherlands Organisation for Applied Scientific Research (TNO)
Advanced Functional Materials
1616-301X (ISSN) 16163028 (eISSN)
Vol. 22 6 1209-1214Subject Categories
Physical Sciences
DOI
10.1002/adfm.201102266