Breakdown of the quantum Hall effect in graphene
Paper in proceeding, 2012
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
precision measurement
Graphene
quantum Hall effect
resistance standard
Author
Tjbm Janssen
National Physical Laboratory (NPL)
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
A. M. R. Baker
University of Oxford
J. A. Alexander-Webber
University of Oxford
R. J. Nicholas
University of Oxford
R. Yakimova
Linköping University
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
S. Kopylov
Lancaster University
V. I. Fal'ko
Lancaster University
CPEM Digest (Conference on Precision Electromagnetic Measurements)
0589-1485 (ISSN)
510-511978-146730439-9 (ISBN)
Subject Categories
Physical Sciences
DOI
10.1109/CPEM.2012.6251027
ISBN
978-146730439-9