Breakdown of the quantum Hall effect in graphene
Paper in proceedings, 2012

We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.

precision measurement

Graphene

quantum Hall effect

resistance standard

Author

Tjbm Janssen

National Physical Laboratory (NPL)

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

A. M. R. Baker

University of Oxford

J. A. Alexander-Webber

University of Oxford

R. J. Nicholas

University of Oxford

R. Yakimova

Linköping University

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

S. Kopylov

Lancaster University

V. I. Fal'ko

Lancaster University

2012 Conference on Precision Electromagnetic Measurements, CPEM 2012, Washington, DC, 1-6 July 2012

0589-1485 (ISSN)

510-511

Subject Categories

Physical Sciences

DOI

10.1109/CPEM.2012.6251027

ISBN

978-146730439-9

More information

Latest update

5/29/2018