Breakdown of the quantum Hall effect in graphene
Paper i proceeding, 2012
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
precision measurement
Graphene
quantum Hall effect
resistance standard