Breakdown of the quantum Hall effect in graphene
Paper i proceeding, 2012
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
precision measurement
Graphene
quantum Hall effect
resistance standard
Författare
Tjbm Janssen
National Physical Laboratory (NPL)
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
A. M. R. Baker
University of Oxford
J. A. Alexander-Webber
University of Oxford
R. J. Nicholas
University of Oxford
R. Yakimova
Linköpings universitet
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
S. Kopylov
Lancaster University
V. I. Fal'ko
Lancaster University
2012 Conference on Precision Electromagnetic Measurements, CPEM 2012, Washington, DC, 1-6 July 2012
0589-1485 (ISSN)
510-511978-146730439-9 (ISBN)
Ämneskategorier
Fysik
DOI
10.1109/CPEM.2012.6251027
ISBN
978-146730439-9