Breakdown of the quantum Hall effect in graphene
Paper i proceeding, 2012

We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.

resistance standard

quantum Hall effect

Graphene

precision measurement

Författare

Tjbm Janssen

National Physical Laboratory

A.Y. Tzalenchuk

National Physical Laboratory

A. M. R. Baker

University of Oxford

J. A. Alexander-Webber

University of Oxford

R. J. Nicholas

University of Oxford

R. Yakimova

Linköpings universitet

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

S. Kopylov

Lancaster University

V. I. Fal'ko

Lancaster University

2012 Conference on Precision Electromagnetic Measurements, CPEM 2012, Washington, DC, 1-6 July 2012

0589-1485 (ISSN)

510-511

Ämneskategorier

Fysik

DOI

10.1109/CPEM.2012.6251027

ISBN

978-146730439-9