Graphene p-n-p junctions controlled by local gates made of naturally oxidized thin aluminium films
Journal article, 2012

Graphene structures with both top- and bottom-electrostatic gates are studied. The top gate is made of thin aluminium (Al) film deposited directly onto graphene, with no prior dielectric layer in between. Natural oxidation of Al at the interface with graphene results in an insulating barrier proving useful in making top gates to graphene. For electrically disconnected top gate, graphene resistance as a function of the slowly-varying back-gate voltage shows hysteresis which reveals dielectric properties of the barrier. The estimated barrier thickness is only 2 nm allowing for very sharp profiles of the electric field in graphene devices. By applying voltages to both back- and top gates, effective p–n–p junctions with sharp interfaces can be created.

Author

Youngwoo Nam

Seoul National University

Niclas Lindvall

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

YungWoo Park

Seoul National University

Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Carbon

0008-6223 (ISSN)

Vol. 50 5 1987-1992

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Roots

Basic sciences

Infrastructure

Nanofabrication Laboratory

Subject Categories

Condensed Matter Physics

DOI

10.1016/j.carbon.2011.12.056

More information

Created

10/8/2017