Low-Temperature Direct Wafer Bonding
Book chapter, 2012

The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high-power and high-frequency electronics, microelectronics components with low energy consumption. After this, several bonding techniques have been developed (e.g. silicon direct bonding, anodic bonding) and are being developed (e.g. low-temperature plasma-assisted direct bonding) to achieve hybrid components, as III-V semiconductors on silicon-based substrates, monolithic integration of optoelectronic devices with high-speed silicon integrated circuits, three-dimensional stacking of integrated circuits (ICs) or circuits transfer onto a variety of substrates. An overview of more recent activities on several techniques for attaining low-temperature bonding is presented.

low temperature direct wafer bonding

direct wafer bonding

wafer bonding

Author

Anke Sanz-Velasco

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Cristina Rusu

RISE Acreo

Isabelle Ferain

Tyndall National Institute at National University of Ireland, Cork

Cindy Colinge

Tyndall National Institute at National University of Ireland, Cork

Mark Goorsky

University of California

Lattice Engineering: Technology and Applications

135-187

Areas of Advance

Nanoscience and Nanotechnology

Energy

Materials Science

Subject Categories

Materials Engineering

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.4032/9789814364256

More information

Latest update

12/17/2018