Low-Temperature Direct Wafer Bonding
Kapitel i bok, 2012

The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high-power and high-frequency electronics, microelectronics components with low energy consumption. After this, several bonding techniques have been developed (e.g. silicon direct bonding, anodic bonding) and are being developed (e.g. low-temperature plasma-assisted direct bonding) to achieve hybrid components, as III-V semiconductors on silicon-based substrates, monolithic integration of optoelectronic devices with high-speed silicon integrated circuits, three-dimensional stacking of integrated circuits (ICs) or circuits transfer onto a variety of substrates. An overview of more recent activities on several techniques for attaining low-temperature bonding is presented.

wafer bonding

direct wafer bonding

low temperature direct wafer bonding

Författare

Anke Sanz-Velasco

Chalmers, Teknisk fysik, Elektronikmaterial och system

Cristina Rusu

Isabelle Ferain

Cindy Colinge

Mark Goorsky

Lattice Engineering: Technology and Applications

135-187

Styrkeområden

Nanovetenskap och nanoteknik

Energi

Materialvetenskap

Ämneskategorier

Materialteknik

Elektroteknik och elektronik

Nanoteknik

ISBN

978-981-4316-29-3

Mer information

Skapat

2017-10-06