Low-Temperature Direct Wafer Bonding
Kapitel i bok, 2012

The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high-power and high-frequency electronics, microelectronics components with low energy consumption. After this, several bonding techniques have been developed (e.g. silicon direct bonding, anodic bonding) and are being developed (e.g. low-temperature plasma-assisted direct bonding) to achieve hybrid components, as III-V semiconductors on silicon-based substrates, monolithic integration of optoelectronic devices with high-speed silicon integrated circuits, three-dimensional stacking of integrated circuits (ICs) or circuits transfer onto a variety of substrates. An overview of more recent activities on several techniques for attaining low-temperature bonding is presented.

low temperature direct wafer bonding

direct wafer bonding

wafer bonding

Författare

Anke Sanz-Velasco

Chalmers, Teknisk fysik, Elektronikmaterial och system

Cristina Rusu

RISE Acreo

Isabelle Ferain

Tyndall National Institute at National University of Ireland, Cork

Cindy Colinge

Tyndall National Institute at National University of Ireland, Cork

Mark Goorsky

University of California

Lattice Engineering: Technology and Applications

135-187

Styrkeområden

Nanovetenskap och nanoteknik (2010-2017)

Energi

Materialvetenskap

Ämneskategorier

Materialteknik

Elektroteknik och elektronik

Nanoteknik

DOI

10.4032/9789814364256

Mer information

Senast uppdaterat

2018-12-17