Concurrent Dual-Band GaN-HEMT Power Amplifier at 1.8 GHz and 2.4 GHz
Paper in proceeding, 2012
This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively. © 2012 IEEE.
gallium nitride (GaN)
digital predistortion (DPD)
power amplifier (PA)
dual-band
harmonic termination
high electron mobility transistor (HEMT)
Author
Paul Saad
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
P. Colantonio
University of Rome Tor Vergata
Junghwan Moon
Pohang University of Science and Technology
L. Piazzon
University of Rome Tor Vergata
F. Giannini
University of Rome Tor Vergata
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Bumman Kim
Pohang University of Science and Technology
Christian Fager
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
13th annual IEEE Wireless and Microwave Technology Conference
6208427
9781467301299 (ISBN)
2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Cocoa Beach, USA,
Cocoa Beach, USA,
Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/WAMICON.2012.6208427