Concurrent Dual-Band GaN-HEMT Power Amplifier at 1.8 GHz and 2.4 GHz
Paper i proceeding, 2012

This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively. © 2012 IEEE.

gallium nitride (GaN)

digital predistortion (DPD)

power amplifier (PA)

dual-band

harmonic termination

high electron mobility transistor (HEMT)

Författare

Paul Saad

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Gigahertzcentrum

P. Colantonio

Universita degli Studi di Roma Tor Vergata

Junghwan Moon

Pohang University of Science and Technology

L. Piazzon

Universita degli Studi di Roma Tor Vergata

F. Giannini

Universita degli Studi di Roma Tor Vergata

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Gigahertzcentrum

Bumman Kim

Pohang University of Science and Technology

Christian Fager

Gigahertzcentrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

13th annual IEEE Wireless and Microwave Technology Conference

6208427
9781467301299 (ISBN)

2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Cocoa Beach, USA,

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/WAMICON.2012.6208427

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Senast uppdaterat

2021-07-07