140-220-GHz DHBT Detectors
Journal article, 2013

This paper discusses G-band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heterojunction bipolar transistor process available from the Teledyne Scientific Company. Two types of detectors are presented-a passive detector where the transistor's base-emitter junction nonlinearity is used, and an active detector, where the transistor transconductance nonlinearity is used for detection. Measurements of transistor noise-power spectrum density at low frequencies is used to model and predict the noise equivalent power (NEP) of the detectors. Analysis of responsivity and noise is presented and compared with measurements. Both configurations are analyzed and compared in terms of noise-voltage, responsivity and NEP. The conclusion that the passive detector offers lower NEP is analyzed and explained.

receivers

responsivity

G-band

flicker noise

radiometers

monolithic microwave integrated circuit (MIMIC)

InP

passive imaging

Double heterojunction bipolar transistor (DHBT)

noise equivalent power (NEP)

power detectors

remote sensing

Author

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Rumen Kozhuharov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Szhau Lai

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 61 6 2353-2360

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/tmtt.2013.2259250

More information

Created

10/7/2017