140-220-GHz DHBT Detectors
Artikel i vetenskaplig tidskrift, 2013

This paper discusses G-band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heterojunction bipolar transistor process available from the Teledyne Scientific Company. Two types of detectors are presented-a passive detector where the transistor's base-emitter junction nonlinearity is used, and an active detector, where the transistor transconductance nonlinearity is used for detection. Measurements of transistor noise-power spectrum density at low frequencies is used to model and predict the noise equivalent power (NEP) of the detectors. Analysis of responsivity and noise is presented and compared with measurements. Both configurations are analyzed and compared in terms of noise-voltage, responsivity and NEP. The conclusion that the passive detector offers lower NEP is analyzed and explained.

receivers

responsivity

G-band

flicker noise

radiometers

monolithic microwave integrated circuit (MIMIC)

InP

passive imaging

Double heterojunction bipolar transistor (DHBT)

noise equivalent power (NEP)

power detectors

remote sensing

Författare

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Rumen Kozhuharov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 61 6 2353-2360

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2013.2259250

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2017-10-07