Quantum resistance metrology using graphene
Journal article, 2013

In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.

Author

Tjbm Janssen

National Physical Laboratory (NPL)

Alexander Tzalenchuk

Royal Holloway University of London

National Physical Laboratory (NPL)

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

V. I. Fal'ko

Lancaster University

Reports on Progress in Physics

0034-4885 (ISSN) 1361-6633 (eISSN)

Vol. 76 10

Subject Categories

Physical Sciences

DOI

10.1088/0034-4885/76/10/104501

More information

Latest update

5/29/2018