Quantum resistance metrology using graphene
Artikel i vetenskaplig tidskrift, 2013

In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.

Författare

Tjbm Janssen

National Physical Laboratory

Alexander Tzalenchuk

National Physical Laboratory

Royal Holloway University of London

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

V. I. Fal'ko

Lancaster University

Reports on Progress in Physics

0034-4885 (ISSN) 1361-6633 (eISSN)

Vol. 76

Ämneskategorier

Fysik

DOI

10.1088/0034-4885/76/10/104501