Reststrahl band-assisted photocurrents in epitaxial graphene layers
Journal article, 2013

We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.

PLASMONS

TUNNELING IONIZATION

DETECTORS

FILMS

GENERATION

MIXER

Author

P. Olbrich

C. Drexler

L. E. Golub

S. N. Danilov

V. A. Shalygin

R. Yakimova

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

B. Redlich

R. Huber

S. D. Ganichev

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 88 24 7-

Subject Categories

Physical Sciences

DOI

10.1103/PhysRevB.88.245425

More information

Created

10/8/2017