Reststrahl band-assisted photocurrents in epitaxial graphene layers
Artikel i vetenskaplig tidskrift, 2013

We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.

PLASMONS

TUNNELING IONIZATION

DETECTORS

FILMS

GENERATION

MIXER

Författare

P. Olbrich

C. Drexler

L. E. Golub

S. N. Danilov

V. A. Shalygin

R. Yakimova

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

B. Redlich

R. Huber

S. D. Ganichev

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 88 24 7-

Ämneskategorier

Fysik

DOI

10.1103/PhysRevB.88.245425

Mer information

Skapat

2017-10-08