Reststrahl band-assisted photocurrents in epitaxial graphene layers
Artikel i vetenskaplig tidskrift, 2013

We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.

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Physical Review B - Condensed Matter and Materials Physics

10980121 (ISSN) 1550235x (eISSN)

Vol. 88 Nummer/häfte 24 s. 7- art. nr 245425

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Ämneskategorier (SSIF 2011)

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DOI

10.1103/PhysRevB.88.245425

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2022-04-05