Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology
Review article, 2013

The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.

SI

QUANTIZED HALL RESISTANCE

quantum Hall effect

Epitaxial graphene

Metrology

CAPACITANCE

Graphene

GAS

GALLIUM-ARSENIDE

STANDARD

Author

Tjbm Janssen

National Physical Laboratory (NPL)

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Royal Holloway University of London

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

V. Fal'ko

Lancaster University

Mapan - Journal of Metrology Society of India

0970-3950 (ISSN) 0974-9853 (eISSN)

Vol. 28 4 239-250

Subject Categories

Physical Sciences

DOI

10.1007/s12647-013-0064-y

More information

Latest update

7/15/2021