Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology
Artikel i vetenskaplig tidskrift, 2013

The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.

GALLIUM-ARSENIDE

QUANTIZED HALL RESISTANCE

CAPACITANCE

STANDARD

quantum Hall effect

Metrology

Epitaxial graphene

Graphene

GAS

SI

Författare

Tjbm Janssen

National Physical Laboratory (NPL)

A.Y. Tzalenchuk

Royal Holloway University of London

National Physical Laboratory (NPL)

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

V. Fal'ko

Lancaster University

Mapan - Journal of Metrology Society of India

0970-3950 (ISSN) 0974-9853 (eISSN)

Vol. 28 4 239-250

Ämneskategorier

Fysik

DOI

10.1007/s12647-013-0064-y

Mer information

Senast uppdaterat

2018-12-27