Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
Journal article, 2014

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

resistance metrology

monolayer and bilayer graphene

quantum point contact

scanning gate microscopy

SiC epitaxial graphene

quantum hall effect

Author

C. Chua

University of Cambridge

M. Connolly

National Physical Laboratory (NPL)

University of Cambridge

Arseniy Lartsev

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thomas Yager

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

S. Kopylov

Lancaster University

V. Fal'ko

Lancaster University

R. Yakimova

Linköping University

R. Pearce

National Physical Laboratory (NPL)

Tjbm Janssen

National Physical Laboratory (NPL)

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Royal Holloway University of London

C. G. Smith

University of Cambridge

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 14 6 3369-3373

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Physical Sciences

DOI

10.1021/nl5008757

More information

Latest update

5/29/2018