Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
Journal article, 2014

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

resistance metrology

monolayer and bilayer graphene

quantum point contact

scanning gate microscopy

SiC epitaxial graphene

quantum hall effect

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Published in

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 14 Issue 6 p. 3369-3373

Categorizing

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories (SSIF 2011)

Physical Sciences

Identifiers

DOI

10.1021/nl5008757

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Latest update

5/29/2018