Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
Journal article, 2014
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
resistance metrology
monolayer and bilayer graphene
quantum point contact
scanning gate microscopy
SiC epitaxial graphene
quantum hall effect
Author
C. Chua
University of Cambridge
M. Connolly
National Physical Laboratory (NPL)
University of Cambridge
Arseniy Lartsev
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Thomas Yager
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
S. Kopylov
Lancaster University
V. Fal'ko
Lancaster University
R. Yakimova
Linköping University
R. Pearce
National Physical Laboratory (NPL)
Tjbm Janssen
National Physical Laboratory (NPL)
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
Royal Holloway University of London
C. G. Smith
University of Cambridge
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 14 6 3369-3373Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1021/nl5008757