Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene
Journal article, 2014

We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz^0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.

direct terahertz detection

antenna-integrated detectors

CVD graphene

Graphene field effect transistors

Author

Audrey Zak

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Maris Bauer

Goethe University Frankfurt

Jonas Matukas

Vilnius University

Alvydas Lisauskas

Vilnius University

Goethe University Frankfurt

Hartmut Roskos

Goethe University Frankfurt

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 14 10 5834-5838

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1021/nl5027309

More information

Latest update

3/29/2018