Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene
Artikel i vetenskaplig tidskrift, 2014
We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz^0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
antenna-integrated detectors
CVD graphene
Graphene field effect transistors
direct terahertz detection
Författare
Audrey Zak
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
MICHAEL ANDERSSON
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Maris Bauer
Johann Wolfgang Goethe Universität Frankfurt am Main
Jonas Matukas
Vilniaus universitetas
Alvydas Lisauskas
Vilniaus universitetas
Johann Wolfgang Goethe Universität Frankfurt am Main
Hartmut Roskos
Johann Wolfgang Goethe Universität Frankfurt am Main
Jan Stake
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 14 10 5834-5838Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)
Infrastruktur
Kollberglaboratoriet
Nanotekniklaboratoriet
Ämneskategorier
Nanoteknik
Annan elektroteknik och elektronik
DOI
10.1021/nl5027309