Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene
Artikel i vetenskaplig tidskrift, 2014

We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz^0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.

direct terahertz detection

antenna-integrated detectors

CVD graphene

Graphene field effect transistors

Författare

Audrey Zak

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

MICHAEL ANDERSSON

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Maris Bauer

Johann Wolfgang Goethe Universität Frankfurt am Main

Jonas Matukas

Vilniaus universitetas

Alvydas Lisauskas

Vilniaus universitetas

Johann Wolfgang Goethe Universität Frankfurt am Main

Hartmut Roskos

Johann Wolfgang Goethe Universität Frankfurt am Main

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 14 10 5834-5838

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Nanoteknik

Annan elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1021/nl5027309

Mer information

Senast uppdaterat

2018-03-29