Effect of Buffer Quality on the Performance of InAs/AlSb Heterostructure Backward Tunneling Diode
Paper in proceeding, 2014

InAs/AlSb Heterostructure Backward Tunneling Diodes (HBTDs) were grown on semi-insulating GaAs (100) substrate using molecular beam epitaxy (MBE). The current-voltage characteristics of the InAs/AlSb HBTDs, both at room temperatures (RT) and cryogenic temperatures, have been studied as a function of the InAs buffer thickness. It has been found that a thicker InAs buffer doesn’t improve the surface roughness but decreases the threading dislocation (TD) density, thus a higher curvature coefficient in the current-voltage characteristics near zero-bias is obtained.

Author

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Parisa Yadranjee Aghdam

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

39th Int. Conf. on Infrared, Millimeter, and THz Waves

2162-2027 (ISSN)

6956521
978-1-4799-3877-3 (ISBN)

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/IRMMW-THz.2014.6956521

More information

Latest update

4/21/2022