Effect of Buffer Quality on the Performance of InAs/AlSb Heterostructure Backward Tunneling Diode
Paper i proceeding, 2014

InAs/AlSb Heterostructure Backward Tunneling Diodes (HBTDs) were grown on semi-insulating GaAs (100) substrate using molecular beam epitaxy (MBE). The current-voltage characteristics of the InAs/AlSb HBTDs, both at room temperatures (RT) and cryogenic temperatures, have been studied as a function of the InAs buffer thickness. It has been found that a thicker InAs buffer doesn’t improve the surface roughness but decreases the threading dislocation (TD) density, thus a higher curvature coefficient in the current-voltage characteristics near zero-bias is obtained.

Författare

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Parisa Yadranjee Aghdam

Chalmers, Rymd- och geovetenskap, Avancerad mottagarutveckling

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

39th Int. Conf. on Infrared, Millimeter, and THz Waves

2162-2027 (ISSN)

Art. no. 6956521-

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/IRMMW-THz.2014.6956521

ISBN

978-1-4799-3877-3