Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
Journal article, 2014

We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

Author

Arseniy Lartsev

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thomas Yager

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

T. Bergsten

SP Sveriges Tekniska Forskningsinstitut AB

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Royal Holloway University of London

Tjbm Janssen

National Physical Laboratory (NPL)

R. Yakimova

Linköping University

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 6 063106

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

European Commission (FP7), 2013-10-01 -- 2016-03-31.

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Physical Sciences

DOI

10.1063/1.4892922

More information

Latest update

9/6/2018 1