Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
Artikel i vetenskaplig tidskrift, 2014

We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

Författare

Arseniy Lartsev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Thomas Yager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

T. Bergsten

SP Sveriges Tekniska Forskningsinstitut AB

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Royal Holloway University of London

Tjbm Janssen

National Physical Laboratory (NPL)

R. Yakimova

Linköpings universitet

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 6 063106

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

Europeiska kommissionen (FP7), 2013-10-01 -- 2016-03-31.

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Fysik

DOI

10.1063/1.4892922

Mer information

Senast uppdaterat

2018-09-06