Extraction of carrier transport properties in graphene from microwave measurements
Paper in proceedings, 2014

Carrier transport parameters of graphene grown by chemical vapor deposition (CVD) and graphene-metal contacts are extracted from microwave measurements in the frequency range 0.1–20 GHz using Corbino disks. It is shown that the charged impurities are effectively screened by the high permittivity of the SrTiO3 substrate. In the case of fused silica substrate the charged impurities are not completely screened and the mobility is limited either by the charged impurities or/and resonant scatterers depending on their relative concentration.

Pd contacts

microwave characterisation

impurity screening

Graphene

carrier scattering

drude model

Author

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

European Microwave Conference (EuMC), 2014 44th

359 - 362

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/EuMC.2014.6986444

More information

Created

10/8/2017