Extraction of carrier transport properties in graphene from microwave measurements
Paper i proceeding, 2014

Carrier transport parameters of graphene grown by chemical vapor deposition (CVD) and graphene-metal contacts are extracted from microwave measurements in the frequency range 0.1–20 GHz using Corbino disks. It is shown that the charged impurities are effectively screened by the high permittivity of the SrTiO3 substrate. In the case of fused silica substrate the charged impurities are not completely screened and the mobility is limited either by the charged impurities or/and resonant scatterers depending on their relative concentration.

Pd contacts

microwave characterisation

impurity screening

Graphene

carrier scattering

drude model

Författare

MICHAEL ANDERSSON

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

European Microwave Conference (EuMC), 2014 44th

359 - 362

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/EuMC.2014.6986444