SIS Tunnel Junction’s Specific Capacitance Direct Measurement
Paper in proceedings, 2014

The need for operating frequencies well into THz region with higher sensitivity and wider bandwidth pushes superconductor-insulator-superconductor (SIS) technology towards junctions with more transparent barrier and higher current densities. Obtaining accurate knowledge of the specific capacitance, which is related to the transparency of the junctions, leads to a precise design of the tuning circuitry. Previously, characterization of the SIS junction’s specific capacitance involved complex measurements providing data relying on various model fitting. Herein, we present the characterization of the specific capacitance by directly measuring the impedance of the SIS tunnel junction at microwave frequencies (~3 GHz).

S-parameter measurements

specific capacitance.

SIS junction

Author

Parisa Yadranjee Aghdam

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Hawal Marouf Rashid

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Vincent Desmaris

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Alexey Pavolotskiy

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Victor Belitsky

Chalmers, Earth and Space Sciences, Advanced Receiver Development

25th International Sympsoium on Space Terahertz Technology, ISSTT 2014; Moscow; Russian Federation; 27 April 2014 through 30 April 2014

109-110

Infrastructure

Onsala Space Observatory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017