SIS Tunnel Junction’s Specific Capacitance Direct Measurement

Paper i proceeding, 2014

The need for operating frequencies well into THz region with higher sensitivity and wider bandwidth pushes superconductor-insulator-superconductor (SIS) technology towards junctions with more transparent barrier and higher current densities. Obtaining accurate knowledge of the specific capacitance, which is related to the transparency of the junctions, leads to a precise design of the tuning circuitry. Previously, characterization of the SIS junction’s specific capacitance involved complex measurements providing data relying on various model fitting. Herein, we present the characterization of the specific capacitance by directly measuring the impedance of the SIS tunnel junction at microwave frequencies (~3 GHz).