High mobility epitaxial graphene devices via aqueous-ozone processing
Journal article, 2015

We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.

Author

Thomas Yager

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

M. J. Webb

Uppsala University

H. Grennberg

Uppsala University

R. Yakimova

Linköping University

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 106 6 063503

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

European Commission (FP7), 2013-10-01 -- 2016-03-31.

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Engineering and Technologies

DOI

10.1063/1.4907947

More information

Latest update

5/22/2018