High mobility epitaxial graphene devices via aqueous-ozone processing
Artikel i vetenskaplig tidskrift, 2015

We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.

Författare

Thomas Yager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

M. J. Webb

Uppsala universitet

H. Grennberg

Uppsala universitet

R. Yakimova

Linköpings universitet

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 106 063503

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Annan teknik

DOI

10.1063/1.4907947