A 110-170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology
Journal article, 2015

A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology. A single-balanced topology is chosen and an active power combiner for the RF and the local oscillator (LO) signals’ combination is used. The designed mixer is feasible to work at ×1, ×2, ×3, ×4 subharmonically LO-pumped mixing modes with relatively low LO powers of 0, -1, 5, and 6 dBm, respectively. The measured conversion gain achieves typical values of -3, -1, -5, and -4 dB over the full D-band while the best noise figures of 12, 13.5, 18.5, and 19 dB are obtained, respectively. Through the multi-mode operation in terms of subharmonic LO-pump-frequency, the designer can make a trade-off between LO frequency, LO power, and noise figure.

Author

Yu Yan

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mingquang Bao

Ericsson AB

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 63 9 2897-2904

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2015.2459676

More information

Latest update

11/19/2018