A 110-170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology
Artikel i vetenskaplig tidskrift, 2015

A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology. A single-balanced topology is chosen and an active power combiner for the RF and the local oscillator (LO) signals’ combination is used. The designed mixer is feasible to work at ×1, ×2, ×3, ×4 subharmonically LO-pumped mixing modes with relatively low LO powers of 0, -1, 5, and 6 dBm, respectively. The measured conversion gain achieves typical values of -3, -1, -5, and -4 dB over the full D-band while the best noise figures of 12, 13.5, 18.5, and 19 dB are obtained, respectively. Through the multi-mode operation in terms of subharmonic LO-pump-frequency, the designer can make a trade-off between LO frequency, LO power, and noise figure.

Författare

Yu Yan

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mingquang Bao

Ericsson Sweden

Sten Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 63 2897-2904

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2015.2459676