Low contact resistance in epitaxial graphene devices for quantum metrology
Journal article, 2015

We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

Author

Thomas Yager

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Arseniy Lartsev

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Karin Cedergren

University of New South Wales (UNSW)

R. Yakimova

Linköping University

V. Panchal

National Physical Laboratory (NPL)

O. Kazakova

National Physical Laboratory (NPL)

A.Y. Tzalenchuk

Royal Holloway University of London

National Physical Laboratory (NPL)

Kyung Ho Kim

Seoul National University

YungWoo Park

Seoul National University

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

AIP Advances

2158-3226 (ISSN) 21583226 (eISSN)

Vol. 5 8 087134- 087134

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Materials Engineering

Nano Technology

DOI

10.1063/1.4928653

More information

Latest update

5/29/2018