Low contact resistance in epitaxial graphene devices for quantum metrology
Journal article, 2015
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.
Author
Thomas Yager
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Arseniy Lartsev
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Karin Cedergren
University of New South Wales (UNSW)
R. Yakimova
Linköping University
V. Panchal
National Physical Laboratory (NPL)
O. Kazakova
National Physical Laboratory (NPL)
A.Y. Tzalenchuk
Royal Holloway University of London
National Physical Laboratory (NPL)
Kyung Ho Kim
Seoul National University
YungWoo Park
Seoul National University
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
AIP Advances
2158-3226 (ISSN) 21583226 (eISSN)
Vol. 5 8 087134- 087134Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Materials Engineering
Nano Technology
DOI
10.1063/1.4928653