Low contact resistance in epitaxial graphene devices for quantum metrology
Artikel i vetenskaplig tidskrift, 2015

We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

Författare

Thomas Yager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Arseniy Lartsev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Karin Cedergren

University of New South Wales (UNSW)

R. Yakimova

Linköpings universitet

V. Panchal

National Physical Laboratory

O. Kazakova

National Physical Laboratory

A.Y. Tzalenchuk

National Physical Laboratory

Royal Holloway University of London

Kyung Ho Kim

Seoul National University

YungWoo Park

Seoul National University

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

AIP Advances

2158-3226 (ISSN)

Vol. 5 087134- 087134

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Materialteknik

Nanoteknik

DOI

10.1063/1.4928653