Study of MgB2 HEB mixers vs the LO frequency and the bath temperature
Paper in proceeding, 2015
We investigate the noise and the gain of MgB2 Hot-Electron Bolometer (HEB) mixers at 1.63THz LO. The critical temperature of the HEB was 22K and the film thickness was 20nm. At 4.2K and 12K bath temperatures the lowest obtained receiver noise temperatures are 1700K and 2100K,respectively, with a noise bandwidth of about 4.6GHz. The gain bandwidth is about 3GHz in both cases.
Author
Serguei Cherednichenko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Evgenii Novoselov
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Stella Bevilacqua
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Hiroyuki Shibata
Nippon Telegraph and Telephone Corporation
Yasuhiro Tokura
Nippon Telegraph and Telephone Corporation
26th International Symposium on Space Terahertz Technology March 16-18, 2015, Cambridge, United States
M2-1
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Kollberg Laboratory
Nanofabrication Laboratory
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Nanoscience and Nanotechnology
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Astronomy, Astrophysics and Cosmology
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology