Study of MgB2 HEB mixers vs the LO frequency and the bath temperature
Paper in proceedings, 2015

We investigate the noise and the gain of MgB2 Hot-Electron Bolometer (HEB) mixers at 1.63THz LO. The critical temperature of the HEB was 22K and the film thickness was 20nm. At 4.2K and 12K bath temperatures the lowest obtained receiver noise temperatures are 1700K and 2100K,respectively, with a noise bandwidth of about 4.6GHz. The gain bandwidth is about 3GHz in both cases.

Author

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Evgenii Novoselov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Stella Bevilacqua

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Hiroyuki Shibata

Nippon Telegraph and Telephone Corporation

Yasuhiro Tokura

Nippon Telegraph and Telephone Corporation

26th International Symposium on Space Terahertz Technology March 16-18, 2015, Cambridge, United States

M2-1

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Astronomy, Astrophysics and Cosmology

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

More information

Created

10/8/2017