MgB2 Hot-Electron Bolometer Mixers at Terahertz Frequencies
Journal article, 2015

In this paper, we compare the performance of MgB2 Hot-Electron Bolometer Mixers operating at Local Oscillator frequencies of 0.6 and 1.63 THz. The minimum noise temperatures that were obtained are 700 and 1150 K for 0.6 and 1.63 THz, respectively. The receiver noise bandwidth is of the order of 2.2-3 GHz for 10-nm-thick HEB devices with a Tc of 8.5 K. Sub-micrometer size HEBs were also fabricated with no degradation of the initial film quality when a 20-nm MgB2 film with a Tc of 22 K was used. In the direct detection mode, the maximum voltage responsivity is in the range of 1-2 kV/W at 1.63 THz and the optimal bias current is around 1/4-1/3 of the Ic at 4.2 K.

hot-electron bolometer

thin film.

terahertz detector

MgB2

HEB mixer

Author

Stella Bevilacqua

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Evgenii Novoselov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Hiroyuki Shibata

Nippon Telegraph and Telephone Corporation

Yasuhiro Tokura

Nippon Telegraph and Telephone Corporation

IEEE Transactions on Applied Superconductivity

1051-8223 (ISSN)

Vol. 25 3 2301104- 6936905

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TASC.2014.2365134

More information

Created

10/7/2017