MgB2 Hot-Electron Bolometer Mixers at Terahertz Frequencies
Artikel i vetenskaplig tidskrift, 2015

In this paper, we compare the performance of MgB2 Hot-Electron Bolometer Mixers operating at Local Oscillator frequencies of 0.6 and 1.63 THz. The minimum noise temperatures that were obtained are 700 and 1150 K for 0.6 and 1.63 THz, respectively. The receiver noise bandwidth is of the order of 2.2-3 GHz for 10-nm-thick HEB devices with a Tc of 8.5 K. Sub-micrometer size HEBs were also fabricated with no degradation of the initial film quality when a 20-nm MgB2 film with a Tc of 22 K was used. In the direct detection mode, the maximum voltage responsivity is in the range of 1-2 kV/W at 1.63 THz and the optimal bias current is around 1/4-1/3 of the Ic at 4.2 K.

hot-electron bolometer

thin film.

terahertz detector

MgB2

HEB mixer

Författare

Stella Bevilacqua

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Evgenii Novoselov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Serguei Cherednichenko

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Hiroyuki Shibata

Nippon Telegraph and Telephone Corporation

Yasuhiro Tokura

Nippon Telegraph and Telephone Corporation

IEEE Transactions on Applied Superconductivity

1051-8223 (ISSN)

Vol. 25 3 2301104- 6936905

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/TASC.2014.2365134

Mer information

Skapat

2017-10-07