Hot spot formation in electron-doped PCCO nanobridges
Journal article, 2016

We have investigated the transport properties of optimally doped Pr2-xCexCuO4-δ (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.

Author

Sophie Charpentier

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Riccardo Arpaia

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

J. Gaudet

Université de Sherbrooke

D. Matte

Université de Sherbrooke

Reza Baghdadi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Tomas Löfwander

Chalmers, Microtechnology and Nanoscience (MC2), Applied Quantum Physics

D. Golubev

Karlsruhe Institute of Technology (KIT)

Aalto University

P. Fournier

Université de Sherbrooke

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physical Review B

24699950 (ISSN) 24699969 (eISSN)

Vol. 94 6 060503

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Nano Technology

DOI

10.1103/PhysRevB.94.060503