Hot spot formation in electron-doped PCCO nanobridges
Artikel i vetenskaplig tidskrift, 2016

We have investigated the transport properties of optimally doped Pr2-xCexCuO4-δ (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.

Författare

Sophie Charpentier

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Riccardo Arpaia

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

J. Gaudet

Université de Sherbrooke

D. Matte

Université de Sherbrooke

Reza Baghdadi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Tomas Löfwander

Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik

D. Golubev

Karlsruher Institut für Technologie (KIT)

Aalto-Yliopisto

P. Fournier

Université de Sherbrooke

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physical Review B

24699950 (ISSN) 24699969 (eISSN)

Vol. 94 060503

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Nanoteknik

DOI

10.1103/PhysRevB.94.060503