A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon
Journal article, 2017

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2x40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ~50 Ω and the ON-OFF ratios of ≥4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-μm-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 ± 2 dB across the 185-210-GHz band with 12.5-11.5 dBm of local oscillator (LO) pump power and >15-dB LO-RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.

graphene

field-effect transistors (FETs)

millimeter-wave integrated circuits

harmonic balance

subharmonic resistive mixers

Coplanar waveguide (CPW)

Author

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Yaxin Zhang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 65 1 165-172 7765107

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2016.2615928

More information

Created

10/7/2017