A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon
Artikel i vetenskaplig tidskrift, 2017

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2x40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ~50 Ω and the ON-OFF ratios of ≥4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-μm-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 ± 2 dB across the 185-210-GHz band with 12.5-11.5 dBm of local oscillator (LO) pump power and >15-dB LO-RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.

graphene

field-effect transistors (FETs)

millimeter-wave integrated circuits

harmonic balance

subharmonic resistive mixers

Coplanar waveguide (CPW)

Författare

MICHAEL ANDERSSON

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Yaxin Zhang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 65 165-172 7765107

Styrkeområden

Informations- och kommunikationsteknik

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2016.2615928